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IPM (Intelligent Power Module)
Intelligent Power Module (IPM) is an advanced power switching device, which has the advantages of high current density, low saturation voltage and high voltage resistance of GTR (Power Transistor), as well as the advantages of high input impedance, high switching frequency and low driving power of MOSFET (Field-Effect Transistor). Moreover, the IPM integrates logic, control, detection and protection circuits internally, which is convenient to use. It not only reduces the volume of the system and the development time, but also greatly enhances the reliability of the system. It adapts to the development direction of today’s power devices – modularization, compounding and Power Integrated Circuit (PIC), and has been more and more widely used in the field of power electronics.
IPM is composed of high-speed, low-power IGBT chips and optimized gate drive and protection circuits, as shown in Figure 1. Among them, IGBT is a combination of GTR and MOSFET, and GTR is driven by MOSFET, so IGBT has the advantages of both.
According to the different configurations of internal power circuits, IPM can be divided into four categories: Type H (one IGBT encapsulated internally), Type D (two IGBTs encapsulated internally), Type C (six IGBTs encapsulated internally) and Type R (seven IGBTs encapsulated internally). Low-power IPM uses a multi-layer epoxy insulation system, and medium and high-power IPM uses ceramic insulation.