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IGBT (Insulated Gate Bipolar Transistor)
IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Junction Transistor) and MOS (Insulated Gate Field-Effect Transistor). It has the advantages of both the high input impedance of MOSFET and the low on-state voltage drop of GTR. GTR has low saturation voltage drop and high current density, but requires a large driving current; MOSFET has very small driving power and fast switching speed, but has large on-state voltage drop and low current density. IGBT combines the advantages of the above two devices, with small driving power and low saturation voltage drop.
IGBT module is a modular semiconductor product formed by bridging and packaging IGBT (Insulated Gate Bipolar Transistor chip) and FWD (Freewheeling Diode chip) through a specific circuit; the packaged IGBT module is directly applied to equipment such as frequency converters and UPS (Uninterruptible Power Supply);
IGBT modules have the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation; most of the products sold in the current market are such modular products, and the commonly referred IGBT also refers to IGBT modules; with the promotion of concepts such as energy conservation and environmental protection, such products will become more and more common in the market;
IGBT is the core device for energy conversion and transmission, commonly known as the “CPU” of power electronic devices. It is suitable for application in converter systems with DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. As a national strategic emerging industry, it is widely used in fields such as rail transit, smart grid, aerospace, electric vehicles and new energy equipment.