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etal-Oxide-Semiconductor Field-Effect Transistor, abbreviated as MOSFET, is a field-effect transistor widely used in both analog and digital circuits.According to the polarity of its “channel” (operating carriers), MOSFETs can be classified into N-type and P-type, commonly referred to as NMOSFET and PMOSFET, with other abbreviations including NMOS, PMOS, etc.
Field-effect transistors have many parameters, including DC parameters, AC parameters, and limit parameters. In general applications, the following main parameters are focused on:
- — Saturation Drain-Source CurrentThe drain-source current when the gate-source voltage in junction-type or depletion-mode insulated-gate field-effect transistors.
- — Pinch-Off VoltageThe gate-source voltage at which the drain-source path is just cut off in junction-type or depletion-mode insulated-gate field-effect transistors.
- — Threshold VoltageThe gate-source voltage at which the drain-source path is just turned on in enhancement-mode insulated-gate field-effect transistors.
- — TransconductanceRepresents the control capability of gate-source voltage over drain current , i.e., the ratio of the change in drain current to the change in gate-source voltage .is an important parameter for measuring the amplification capability of field-effect transistors.
- — Drain-Source Breakdown VoltageThe maximum drain-source voltage that a field-effect transistor can withstand under normal operation at a given gate-source voltage .This is a limit parameter; the operating voltage applied to the FET must be lower than .
- — Maximum Power DissipationAlso a limit parameter, referring to the maximum allowable drain-source power dissipation without performance degradation.In application, the actual power consumption of the FET should be less than with a certain safety margin.
- — Maximum Drain-Source CurrentA limit parameter indicating the maximum allowable current between drain and source during normal operation.The operating current of the FET should not exceed .