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High-voltage MOSFETs typically have a voltage rating of around 400V to 1000V.
High-voltage MOSFETs have a slower switching speed than low-voltage MOSFETs.
MOSFET stands for Metal-Oxide-Semiconductor Field-Effect Transistor, also known as Metal-Insulator-Semiconductor transistor.
 
The source and drain of a MOSFET are interchangeable; both are N-type regions formed in a P-type backgate.
 
In most cases, these two regions are identical, so swapping the two terminals will not affect device performance.
 
(1) It conducts using majority carriers, resulting in good temperature stability.
 
(2) The input current of a field-effect transistor is extremely small, so its input resistance is very high.
 
(3) A field-effect transistor is a voltage-controlled device; it controls via .
 
(4) The voltage amplification factor of amplifier circuits composed of FETs is lower than that of circuits using bipolar transistors.
 
(5) Field-effect transistors have strong radiation resistance.
 
(6) There is no shot noise caused by the random diffusion of minority carriers, so the noise level is low.