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Metal-Oxide-Semiconductor Field-Effect Transistor, abbreviated as MOSFET, is a field-effect transistor widely used in analog and digital circuits.
According to the polarity of its channel (operating carriers), MOSFETs are divided into N-type and P-type, commonly known as NMOSFET and PMOSFET, with other abbreviations such as NMOS and PMOS.
According to the polarity of its channel (operating carriers), MOSFETs are divided into N-type and P-type, commonly known as NMOSFET and PMOSFET, with other abbreviations such as NMOS and PMOS.
- A field-effect transistor is a voltage-controlled device, while a bipolar junction transistor is a current-controlled device.Field-effect transistors should be used when only a small current draw from the signal source is allowed;bipolar transistors should be used when the signal voltage is low and a larger current draw is permitted.
- The source and drain of some FETs are interchangeable, and the gate voltage can be either positive or negative, offering greater flexibility than bipolar transistors.
- FETs conduct using majority carriers only and are therefore called unipolar devices.Bipolar junction transistors use both majority and minority carriers and are thus called bipolar devices.
- FETs can operate at very low currents and voltages, and their manufacturing process allows easy integration of many FETs onto a single silicon chip.For this reason, FETs are widely used in large-scale integrated circuits.